n-channel 50-v(d-s) mosfet fea t ure z high density cell design for extremely low r ds(on) z rugg ed and relaible maximum ratings (t a =25 unless ot her wise noted) para meter symbol value unit drain-s ourc e voltage v ds 5 0 conti nuo us gate-source voltage v gss 20 v conti nuo us drain current i d 0.22 a po w er dissipation p d 0.35 w t hermal resist ance from junction to ambient r ja 357 /w operatin g t emperature t j 150 storage t e mperature t st g -55 ~ +150 so t -23 1. g a te 2. source 3. drain 1 marking equivalent circuit direct logic- level interface: tt l/cmos drivers: relays, solenoids, lamps, hamm ers,display , memories, transistors, etc. battery operated systems soli d-state relays applica tion z z z z v (br ) dss r ds(o n) max i d 50 v 3.5 @ 10v 220m a 6 @ 4.5v ? ? BSS138
para meter sy mbol test condition min typ max units off ch aracteristics drain-s ource breakdown voltage v (br)ds s v gs = 0v, i d = 250a 50 v gate-bod y leak age i gss v ds =0 v, v gs =20v 10 0 na v ds = 50v, v gs =0 v 0.5 a z ero gate volt age drain current i dss v ds = 30v, v gs =0 v 100 na on characteri stics gate-thresho ld voltage (n ote 1) v gs(t h) v ds =v gs , i d = 1ma 0.80 1.50 v v gs = 10v, i d =0.22a 3.50 static drain-s ource on-r esistance (note 1) r ds (on) v gs =4.5v, i d =0.22a 6 ? f or ward transconductance (note 1) g fs v ds = 10v, i d =0.22a 0.12 s d ynamic characteristics (note 2) input cap acitan ce c iss 27 output capac itance c oss 13 revers e transfer capacitanc e c rss v ds = 25v,v gs =0v, f=1mhz 6 pf s witch ing characteristics t urn-on dela y time (note 1,2) t d( on) 5 rise time (n ote 1,2) t r 18 t urn-off dela y time (note 1,2) t d( of f) 36 f all time (note 1,2) t f v dd = 30v, v ds = 10v, i d = 0.29a, r gen =6 ? 14 ns dra in-source body diode characteristics bod y di ode forward voltage (note 1) v sd i s = 0.44a, v gs = 0v 1.4 v no tes: 1. pulse test ; pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. mosfet electrical characteristics a t =25 unless otherwise specified 2 BSS138
01234 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.2 0 .4 0.6 0 .8 1.0 1.2 1.4 1e-3 0.01 0.1 1 012345 0.0 0.5 1.0 1.5 2.0 0.2 0 .4 0.6 0 .8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0246 8 1 0 0 1 2 3 4 5 6 t a =25 pulsed tr an sfer characteristics drain current i d (a) gate to source voltage v gs (v) 3e-3 0.03 t a =25 pulsed 0.3 v sd i s ?? source current i s (a) source to drain voltage v sd (v) t a =25 pulsed 5v 4v 3v v gs =10v 2v out put characteristics drain current i d (a) drain to source voltage v ds (v) 0.1 t a =25 puls ed v gs =4.5v v gs =6v v gs =10v on - resistance r ds( o n) ( ? ) drain current i d (a) t a =25 puls ed i d =500ma i d r ds(on) ?? v gs r ds(on) ?? on - resistance r ds( o n) ( ? ) gate to source voltage v gs (v) ty pical characteristics
mi n m ax min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 6 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ
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